Samsung 9th Gen V-NAND With 290 Layers Launches Next Month, 10th Gen 430-Layer NAND In 2025

Samsung plans to take the NAND flash industry to a new level, as the firm discloses its 9th & 10th Gen V-NAND solutions with up to 430 layers.

Samsung Is Making NAND Flash Memory With Up To 430 Layers As Part of Its 10th Gen V-NAND Tech, Debuts Next Year

The NAND flash markets have been recovering quickly from their dire economic state for the past consecutive quarters, thanks to weakened consumer demand and high inventory levels. However, now that we have gone through it, it seems like the layer of innovation has kicked in, and it is none other than Samsung that has unveiled a relatively high-end NAND type called the 9th Gen V-NAND flash. This type features a whopping 290 layers stacked upon each other, setting a new benchmark for the markets.

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Korean media outlets report that Samsung plans to release its 9th Gen NAND standard by next month, likely to succeed the previous generation, which featured 236 layers of stacking. It appears to be that the industry is likely dragged into the "layer stacking" race, and by far, Samsung looks way ahead of competitors like SK Hynix and Kioxia. Interestingly, the Korean giant also announced a NAND product with a shocking 430-layer stacking (10th Gen V-NAND) which is expected to launch next year.

Another exciting aspect of Samsung's latest 9th Gen NAND process is the "double stacking" technique, which focuses on squeezing more layers through multiple channel holes. This technique utilizes electricity to connect individual cells. The drilling technique not only ensures a higher interconnect efficiency, but this process is a whole lot cheaper compared to traditional stacking methods.

The utilization of NAND products has radically increased in the past few months, mainly due to the usage of products involved in AI inference since they require tons of high-speed storage. Ultimately, this has